A backside illuminated (BSI) CMOS imager technology optimized for night vision applications (NVCMOS^TM) has been developed employing a hole-based p-type pixel (pMOS). Benefits of the technology include lower dark current and reduced random telegraph noise (RTN) as compared to conventional electron-based n-type pixels (nMOS). The measured performance of the BSI first generation digital reference design is reported. A high definition sensor (1920 x 1200) now in development is described.